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| inchange semiconductor product specification silicon npn power transistors BUH517 description ? with to-3pml package ? high voltage,high speed ? low collector saturation voltage applications ? horizontal deflection stage in standard and high reslolution displays for tv?s and monitors. ? switching power supplies for tv?s and monitors. pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1700 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 10 v i c collector current (dc) 8 a i cm collector current (pulse) 15 a i b base current (dc) 5 a i bm base current (pulse) 8 a p tot total power dissipation t c =25 ?? 60 w t j operating junction temperature 150 ?? t stg storage temperature -65~150 ?? fig.1 simplified outline (to-3pml) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BUH517 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0 700 v v (br)ebo emitter-base breakdown voltage i e =10ma; i c =0 10 v v cesat collector-emitter saturation voltage i c =5a ;i b =1.25a 1.5 v v besat base-emitter saturation voltage i c =5a ;i b =1.25a 1.3 v i ces collector cut-off current v ce =1700v ; v be =0 t j =125 ?? 1.0 2.0 ma i ebo emitter cut-off current v eb =5v; i c =0 100 | a h fe dc current gain i c =5a ; v ce =5v 6 switching times t s storage time 2.7 3.9 | s t f fall time i c =5a;i b1 =1.25a;i b2 =2.5a; v cc =400v 190 280 ns thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 2.08 ?? /w inchange semiconductor product specification 3 silicon npn power transistors BUH517 package outline fig.2 outline dimensions |
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